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| AO4624 Complementary Enhancement Mode Field Effect Transistor General Description The AO4624 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4624 is Pb-free (meets ROHS & Sony 259 specifications). AO4624L is a Green Product ordering option. AO4624 and AO4624L are electrically identical. Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -6A (VGS=-10V) RDS(ON) < 35m (VGS = -10V) < 58m (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 D1 SOIC-8 S1 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain A Current Pulsed Drain Current Power Dissipation B Avalanche Current B Max p-channel -30 20 -6 -5 -30 2 1.44 20 20 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C B 6.9 ID IDM PD IAR EAR TJ, TSTG 5.8 30 2 1.44 15 11 -55 to 150 W A mJ C Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 40 Units C/W C/W C/W 62.5 C/W 110 C/W 40 C/W Alpha & Omega Semiconductor, Ltd. AO4624 N-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C 10 1 20 1.9 23 31 34 15.4 0.76 Min 30 0.002 1 5 100 3 28 38 42 1 3 885 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 737 115 73 3 13.84 6.74 1.82 3.2 4.6 4.1 20.6 5.2 17.9 9.8 4.5 17 8.1 VGS=10V, VDS=15V, ID=6.9A VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s IF=6.9A, dI/dt=100A/s 7 6 30 8 21.5 11.8 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. R JL and RJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 25 20 ID (A) 15 10V 20 6V 5V 4.5V 16 12 8 4 0 125C 25C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS=5V 4V ID(A) 4 5 3.5V 10 5 0 0 1 2 3 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V VGS (Volts) Figure 2: Transfer Characteristics 60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature ID=6.9A VGS=10V VGS=4.5V ID=5A VGS=10V 70 ID=6.9A 60 10 1 RDS(ON) (m) IS Amps 50 40 30 0.01 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 125C 125 0.1 25C Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Qg (nC) Figure 7: Gate-Charge characteristics VDS=15V ID=6.9A Capacitance (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 100 TJ(Max)=150C TA=25C 10 1ms 10ms 1 RDS(ON) limited 0.1s 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100s 40 TJ(Max)=150C TA=25C 30 10s Power W 20 ID (Amps) 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 100 1000 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4624 P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6A TJ=125C -1.2 30 -2 27 37 45 13 -0.76 Min -30 -0.003 -1 -5 100 -2.4 35 45 58 -1 -4.2 1100 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 920 190 122 3.6 18.5 9.6 2.7 4.5 7.7 5.7 20.2 9.5 20 12.3 5.4 22.2 11.6 VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7, RGEN=3 IF=-6A, dI/dt=100A/s IF=-6A, dI/dt=100A/s 11.5 8.5 30 14 24 15 2 A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The JA A value in any any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance given application depends on the user's specific board design. The current rating is based on the t The value in 10s thermal rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. R JL and RJC are equivalent terms referring to thermal resistance from junction to drain 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to lead. D. These tests are performed with the device mounted on 1 in 2 using board with 2oz.duty cycle 0.5% max. E. The static characteristics in Figures 1 to 6,12,14 are obtained FR-4 80 s pulses, Copper, in a still air environment with T A=25C. E. These curve provides a single the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The The SOA tests are performed withpulse rating. SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 70 60 RDS(ON) (m) 50 40 30 20 10 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) -IS (A) 70 60 50 40 30 20 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 25C 125C ID=-6A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-10V VGS=-4.5V 1.6 ID=-6A 1.4 VGS=-10V -3.5V -6V -4V -ID(A) -5V -4.5V 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=-5V VGS=-3V 1.2 VGS=-4.5V ID=-5A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. AO4624 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-6A Capacitance (pF) 1250 1000 750 500 Coss 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W) 40 TJ(Max)=150C TA=25C 30 -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ZJA Normalized Transient Thermal Resistance 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 Alpha & Omega Semiconductor, Ltd. |
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